DocumentCode :
2607808
Title :
New method for comprehensive characterisation of MES/MOD/MOS FET´s
Author :
Parker, Anthony E. ; Scott, Jonathan B.
Author_Institution :
Dept. of Electron., Macquarie Univ., Sydney, NSW, Australia
fYear :
1993
fDate :
3-6 May 1993
Firstpage :
1093
Abstract :
A measurement technique for performing detailed characterisation of modern field effect transistors (FETs) is reported. The technique, based on impulse excitation over arbitrary voltage and time contours, allows determination of parameters and time constants associated with second-order effects observed in short-channel FETs and IIV-V semiconductors. Large-signal bias-independent models that incorporate these additional parameters provide predictions that are consistent with large-signal measurements and conventional s-parameter results
Keywords :
MOSFET; Schottky gate field effect transistors; automatic testing; high electron mobility transistors; semiconductor device testing; HEMT; IIV-V semiconductors; MESFET; MODFET; MOSFET large-signal bias-independent models; characterisation; field effect transistors; impulse excitation; measurement technique; second-order effects; short-channel FETs; time constants; FETs; Instruments; Measurement techniques; Predictive models; Probes; Pulse measurements; SPICE; Scattering parameters; Time measurement; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 1993., ISCAS '93, 1993 IEEE International Symposium on
Conference_Location :
Chicago, IL
Print_ISBN :
0-7803-1281-3
Type :
conf
DOI :
10.1109/ISCAS.1993.393925
Filename :
393925
Link To Document :
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