Impact of point defect location in nanowire silicon MOSFETs

This paper discusses the influence of a single impurity location on the drain current in silicon nanowire MOSFETs. A careful description of point defects in a 3D quantum simulator has been implemented. The modeling scheme is based on the nonequilibrium Green´s function method (NEGF) self-consistently coupled to the solution of the 3D Poisson´s equation. The impact of the defect location on the device parameters and current characteristics is studied in details. The results show that a small variation in the position of a single impurity in the channel may significantly (up to one order of magnitude) modifies the drain current.