DocumentCode :
2608452
Title :
A physics-based low frequency noise model for MOSFETs under periodic large signal excitation
Author :
Brederlow, Ralf ; Koh, Jeongwook ; Thewes, Roland
Author_Institution :
Infineon Technol. AG, Munich, Germany
fYear :
2005
fDate :
12-16 Sept. 2005
Firstpage :
333
Lastpage :
336
Abstract :
In recent years several publications have reported reductions in the low frequency noise of MOSFETs under large signal excitation presented in I. Bloom et al. (1991), P. Dierickx et al. (1992), E. A. M. Klumperink et al. (2000), H. Tian et al. (2001) and J. S. Kolhatkar et al. (2004). These observations can become very relevant for analog and RF circuit design as stated in E. A. M. Klumperink et al. (2000) and J. Koh et al. (2004). The classically used low frequency noise models for circuit simulation are not able to explain the effect. In this paper, we extend the models to nonequilibrium biasing conditions and give a device-physics based explanation for the noise amplitude reduction. In addition we present measurements in good agreement with the derived model, and suggest how to implement it into standard compact models.
Keywords :
MOSFET; circuit simulation; semiconductor device models; semiconductor device noise; MOSFET; RF circuit design; analog circuit design; circuit simulation; low frequency noise models; noise amplitude reduction; nonequilibrium biasing conditions; periodic large signal excitation; Autocorrelation; CMOS technology; Circuit noise; Low-frequency noise; MOSFETs; Noise level; Physics; Radio frequency; Semiconductor device modeling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
Type :
conf
DOI :
10.1109/ESSDER.2005.1546653
Filename :
1546653
Link To Document :
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