Title :
Assessment of MESFET models for nonlinear microwave circuit design
Author :
Rodriguez-Tellez, J. ; Al-Daas, M. ; Mezher, K.A.
Author_Institution :
Dept. of Electron. & Electr. Eng., Bradford Univ., UK
Abstract :
The Curtice quadratic, Materka, Statz and Rodriguez nonlinear models are compared from DC, constant voltage (CV) and RF points of view in order to determine which is most suitable for nonlinear wideband circuit design. For this comparison, a variety of different size GaAs MESFET devices is employed. Data for a 25-μm and 900-μm gate-width device with a pinch-off voltage of -2V and a gate-length of 0.5-μm are extensively used for the model comparison work
Keywords :
III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; microwave circuits; microwave field effect transistors; nonlinear network synthesis; semiconductor device models; -2 V; 0.5 micron; 25 micron; 900 micron; AC model equations; DC model equations; GaAs; MESFET models; nonlinear microwave circuit design; nonlinear models; wideband circuit design; Capacitance; Capacitors; Circuit synthesis; Equations; MESFET circuits; Predictive models; Resistors; Topology; Voltage; Wideband;
Conference_Titel :
Circuits and Systems, 1993., ISCAS '93, 1993 IEEE International Symposium on
Conference_Location :
Chicago, IL
Print_ISBN :
0-7803-1281-3
DOI :
10.1109/ISCAS.1993.393963
