Title :
Detection of THz electromagnetic radiation with Si/SiGe HFET
Author :
Richard, Soline ; Zerounian, Nicolas ; Boucaud, Philippe ; Ortega, Jean-Michel ; Hackbarth, Thomas ; Herzog, Hans-Joest ; Aniel, Frederick
Author_Institution :
Inst. d´´Electronique Fondamentale, Univ. Paris, Orsay, France
Abstract :
We report an investigation on THz signal detection using plasma instabilities in two-dimensional electron gas of a tensile strained silicon quantum well of Si/SiGe hetero-FET. It is, to our knowledge, the first measurements of THz nonlinear behaviour in such silicon-based devices. We discuss the key parameters which are controlling detection and oscillation in THz range. It appears that strained channel Si-based devices are well suited for such applications.
Keywords :
Ge-Si alloys; elemental semiconductors; high electron mobility transistors; semiconductor quantum wells; signal detection; silicon; submillimetre wave propagation; submillimetre wave transistors; submillimetre waves; SiGe-Si; THz signal detection; electromagnetic radiation detection; electron gas; heteroFET; plasma instabilities; silicon quantum well; Electromagnetic radiation; Germanium silicon alloys; HEMTs; MODFETs; Plasma devices; Plasma measurements; Radiation detectors; Signal detection; Silicon germanium; Silicon radiation detectors;
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
DOI :
10.1109/ESSDER.2005.1546660
