Title :
A precision CMOS voltage reference with enhanced stability for the application to advanced VLSIs
Author :
Yoo, Hoi-Jun ; Lee, Seung-Jun ; Kwon, Jeong-Tae ; Min, W.-S. ; Oh, Kye-Hwan
Author_Institution :
Hyundai Electronics Inc., Kyoungki-Do, South Korea
Abstract :
A precision CMOS voltage reference circuit is very important for the design of the stable voltage-down converter of high density VLSIs. By using the active mode operation of the component MOS transistors, a CMOS bandgap type reference voltage circuit is redesigned for the enhancement of the circuit stability against the internal noises. The voltage supply independence, temperature independence and the stability characteristics of the reference circuit are analyzed by using an analytical model. The designed circuit is incorporated into a 5-V to 3.3-V down converter and integrated into a 16-M DRAM by using 0.6-μm CMOS technology. The measured characteristics of the fabricated voltage-down converter show a voltage dependence of 47.5 mV/V and 18 ppm/C temperature coefficient at Vext = 3.2 V and 255 ppm/C at Vext = 5.45 V, respectively
Keywords :
CMOS memory circuits; DC-DC power convertors; DRAM chips; VLSI; circuit stability; power supply circuits; reference circuits; 0.6 micron; 16 Mbit; 3.3 V; 5 V; CMOS bandgap type reference; DRAM; active mode operation; advanced VLSIs; circuit stability; high density VLSIs; precision CMOS voltage reference; stability characteristics; stable voltage-down converter; temperature coefficient; temperature independence; voltage supply independence; Active noise reduction; CMOS technology; Circuit analysis; Circuit stability; MOSFETs; Photonic band gap; Stability analysis; Temperature; Very large scale integration; Voltage;
Conference_Titel :
Circuits and Systems, 1993., ISCAS '93, 1993 IEEE International Symposium on
Conference_Location :
Chicago, IL
Print_ISBN :
0-7803-1281-3
DOI :
10.1109/ISCAS.1993.393973
