• DocumentCode
    2608908
  • Title

    Reliability of Gold Metallized Commercially Available Power GaAs FETs

  • Author

    Cohen, Eliot D. ; Macpherson, Alan C.

  • Author_Institution
    Naval Research Laboratory, Washington, D.C. 20375
  • fYear
    1979
  • fDate
    28946
  • Firstpage
    156
  • Lastpage
    160
  • Abstract
    Commercially available 0.5 watt GaAs FETs with gold based refractory gate metallizations have been subjected to accelerated stress testing under r.f. operation at 8 GHz. The results of these tests indicate that a conservative estimate of the mean time to failure of these devices is 2.5 × 106 hours at 125°C channel temperature.
  • Keywords
    Aluminum; Capacitance-voltage characteristics; FETs; Gallium arsenide; Gold; Life estimation; Metallization; Temperature; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1979. 17th Annual
  • Conference_Location
    San Diego, CA, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1979.362886
  • Filename
    4208279
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2608908