Title :
Performance characterization of MOS turn off thyristors
Author :
Gutierrez, Monica ; Venkateramanan, G. ; Moreira, Alessandro ; Sundaram, Ashok
Author_Institution :
Underwriters Lab., Camas, WA, USA
Abstract :
Recently, power semiconductor devices that combine the technology of MOS turn-off and bipolar conduction have been introduced for operation at high voltage and current levels. The MOS turn off thyristor (MTOTM) is a switching device based on the gate turn off thyristor. This paper is devoted to presenting the results from a study performed to examine the operating characteristics of the MTOTM . The study included experimental measurements of on-state properties and switching characteristics under snubberless hard switching. Turn off loss, device switching delay time, storage time, transition time and on-state losses are characterized. In addition to the experimental results, the paper also presents a brief review of operation of the device and the experimental procedure used in the study
Keywords :
MOS-controlled thyristors; loss measurement; power semiconductor switches; semiconductor device measurement; semiconductor device testing; MOS turn off thyristors; bipolar conduction; device switching delay time; gate turn off thyristor; on-state losses; on-state properties; operating characteristics; performance characterization; power semiconductor devices; snubberless hard switching; storage time; switching characteristics; transition time; turn off loss; Circuits; Delay; Insulated gate bipolar transistors; Laboratories; Lakes; Low voltage; Power semiconductor devices; Power semiconductor switches; Semiconductor device packaging; Thyristors;
Conference_Titel :
Industry Applications Conference, 2000. Conference Record of the 2000 IEEE
Conference_Location :
Rome
Print_ISBN :
0-7803-6401-5
DOI :
10.1109/IAS.2000.882570
