Title :
A new validated physically based IGCT model for circuit simulation of snubberless and series operation
Author :
Kuhn, H. ; Schrbder, D.
Author_Institution :
Inst. of Electr. Drives, Tech. Univ. Munchen, Germany
Abstract :
A new physically based model which is implemented in Saber MAST(R) and usable for circuit simulation in order to calculate the static and dynamic behaviour of IGCT devices correctly is presented in this paper. The model is verified by comparing simulation with experimental results of a 4.5 kV/3 kA-IGCT in hard switch snubberless operation. Furthermore simulation results of two series connected IGCT switches are analyzed especially concerning the problem of nonsymmetrically distributed blocking voltages between the switches if snubbers are omitted due to inevitably existent differences concerning the exact device properties and the gate drives respectively. An idea for dimensioning the snubber capacity is given
Keywords :
circuit simulation; power semiconductor switches; semiconductor device models; thyristors; 4.5 kV; IGCT switches; Saber MAST(R); circuit simulation; dynamic behaviour; integrated gate commutated thyristors; nonsymmetrically distributed blocking voltages; physically based IGCT model; series operation; snubber capacity dimensioning; snubberless operation; static behaviour; Anodes; Buffer layers; Cathodes; Circuit simulation; Physics; Scattering; Snubbers; Switches; Thyristors; Voltage;
Conference_Titel :
Industry Applications Conference, 2000. Conference Record of the 2000 IEEE
Conference_Location :
Rome
Print_ISBN :
0-7803-6401-5
DOI :
10.1109/IAS.2000.882572
