Title :
CoolMOS-a new approach towards system miniaturization and energy saving
Author :
Lorenz, L. ; Zverev, I. ; Mittal, A. ; Hancock, J.
Author_Institution :
Infineon Technol., Munich, Germany
Abstract :
The CoolMOS Technology from Infineon is in most cell electrical parameters superior to the conventional power MOSFET. The entire and very easy variation of switching time di/dt- and dv/dt values open up a wide area in the application from extremely fast switching to the soft switching behaviour. Ruggedness aspects such as avalanche behaviour are excellent. The overall dynamic behaviour gives an outstanding MOS-controlled device
Keywords :
avalanche breakdown; energy conservation; power MOSFET; switching; CoolMOS; Infineon; MOS-controlled device; avalanche behaviour; energy saving; fast switching; power MOSFET; ruggedness; soft switching; switching time di/dt values; switching time dv/dt values; system miniaturization; Capacitance; Cost function; Driver circuits; Energy management; Optimized production technology; Power MOSFET; Power electronics; Power system reliability; Semiconductor device doping; Voltage;
Conference_Titel :
Industry Applications Conference, 2000. Conference Record of the 2000 IEEE
Conference_Location :
Rome
Print_ISBN :
0-7803-6401-5
DOI :
10.1109/IAS.2000.882589
