Title :
Back contacted emitter GaAs solar cells
Author :
Araújo, Gerardo ; Martí, Antonio ; Algora, Carlos
Author_Institution :
Inst. de Energia Solar, Univ. Politecnica de Madrid, Spain
Abstract :
A device structure to improve the performance of GaAs concentrator solar cells is described, and the first experimental results are reported. The reason for such an improvement is a drastic reduction of the shadowing and series resistance losses based on the possibility of back contacting the emitter region of the solar cell. This innovative structure offers the possibility of surpassing the 28% efficiency (100 mW AM1.5 direct spectrum), with present GaAs technology. Furthermore, it allows the shifting of the optimum concentration ratio to very high levels (in the range of 1000 suns). The experimental results obtained with devices of this type, which have a simplified structure and are fabricated by liquid phase epitaxy (LPE), demonstrate the feasibility and correct operation of the proposed back contact of the emitter of the cells
Keywords :
III-V semiconductors; gallium arsenide; liquid phase epitaxial growth; semiconductor growth; solar cells; solar energy concentrators; 100 mW; 28 percent; GaAs; back contacting; concentrator solar cells; emitter; liquid phase epitaxy; performance; semiconductors; series resistance losses; shadowing; structure; Contact resistance; Dielectrics and electrical insulation; Gallium arsenide; Photovoltaic cells; Photovoltaic systems; Shadow mapping; Solar power generation; Substrates; Sun; Telecommunication standards;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111599
