Title :
Study of surface passivation as a function of InP closed-ampoule solar cell fabrication processing variables
Author :
Faur, M. ; Faur, M. ; Jenkins, Phillip ; Goradia, M. ; Bailey, Susan ; Jayne, D. ; Weinberg, I. ; Goradia, C.
Author_Institution :
Dept. of Electr. Eng., Cleveland State Univ., OH, USA
Abstract :
The effects of various surface preparation procedures, including chemical treatment and anodic or chemical oxidation, closed-ampoule diffusion conditions, and post-diffusion surface preparation and annealing conditions, on the passivating properties of InP have been investigated in order to optimize the fabrication procedures of n+ p InP solar cells made by closed-ampoule diffusion of sulfur into p-type InP. The InP substrates used were p-type Cd-doped to a level of 1.7×1016 cm-3, Zn-doped to levels of 2.2×1016 and 1.2×1018 cm-3, and n-type S-doped to 4.4×1018 cm-3. The passivating properties have been evaluated from photoluminescence and conductance-voltage characteristics data. Good agreement was found between the level of surface passivation and the composition of different surface layers as revealed by X-ray photoelectron spectroscopy (XPS) analysis
Keywords :
III-V semiconductors; indium compounds; passivation; semiconductor device manufacture; solar cells; surface treatment; InP; X-ray photoelectron spectroscopy; annealing; closed-ampoule diffusion; conductance-voltage characteristics; oxidation; photoluminescence; semiconductors; solar cell fabrication; substrates; surface passivation; surface preparation; Annealing; Chemicals; Fabrication; Indium phosphide; Oxidation; Passivation; Photoluminescence; Photovoltaic cells; Spectroscopy; Surface treatment;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111604
