DocumentCode :
2610341
Title :
A unified process for fabricating lasers, detectors, modulators, and waveguides
Author :
Burton, R.S. ; Schlesinger, T.E. ; Smith, S.C. ; Burnham, R.D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
fYear :
1991
fDate :
5-7 Aug 1991
Firstpage :
245
Lastpage :
251
Abstract :
A unified process for integrating lasers, detectors, modulators, and waveguides for optoelectronic integrated circuits (OEICs) on a single substrate is described. The devices are fabricated from a quantum well heterostructure (QWH). Initial efforts have been directed toward fabricating these devices in a ridge waveguide form because of the simplicity of fabrication. A QWH is grown by metalorganic chemical vapor deposition (MOCVD) and modified as necessary to produce detectors, modulators, and waveguides. The detector is essentially given, because the laser structure can be operated with no bias (no dark current) and photogenerated carriers will be swept out of the quantum well by the large built-in field. The waveguides are produced by etching a ridge to induce an effective lateral index step, as are the other devices, and the GaAs quantum well can also be slightly disordered using Ga vacancy diffusion to shift the absorption edge of the waveguide to a longer wavelength than the emission wavelength of the laser. The modulator regions may be Ga vacancy diffused or not, depending on the modulator type and function. The characteristics of an inline laser-modulator-detector structure are reviewed. Results of modeling ridge waveguide structures for Δβ modulators are discussed. Several self-aligned fabrication processes that have the best prospects for reliable integration of lasers, detectors, modulators, and waveguides are introduced
Keywords :
III-V semiconductors; gallium arsenide; integrated optoelectronics; optical modulation; optical waveguides; photodetectors; semiconductor junction lasers; semiconductor quantum wells; GaAs quantum well; MOCVD; OEICs; characteristics; fabrication; inline laser-modulator-detector structure; lasers; metalorganic chemical vapor deposition; optical detectors; optical modulators; optical waveguides; optoelectronic integrated circuits; quantum well heterostructure; ridge waveguide; self-aligned fabrication processes; semiconductors; simplicity of fabrication; single substrate; unified process; Chemical lasers; Chemical vapor deposition; Dark current; Detectors; Etching; Laser modes; MOCVD; Optical device fabrication; Quantum well lasers; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0491-8
Type :
conf
DOI :
10.1109/CORNEL.1991.169992
Filename :
169992
Link To Document :
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