Characterization of antireflection films for surface-passivated crystalline silicon solar cells using spectroscopic ellipsometry

Author

Kamataki, O. ; Iida, S. ; Saitoh, T. ; Uematsu, T.

Author_Institution

Tokyo Univ. of Agric. & Technol., Japan

fYear

1990

fDate

21-25 May 1990

Firstpage

363

Abstract

Spectroscopic ellipsometry has been utilized to measure complex refractive indices for TiO₂-based antireflection films. The indices of the films chemically deposited at 300°C are found to vary with measurement wavelength and sample annealing temperature. By using the spectroscopic refractive indices, measured surface reflection spectra are found to coincide with calculated ones. Short-circuit current density limit values for surface-passivated, flat and V-grooved cell structures are calculated and compared as functions of SiO₂ and TiO₂ thicknesses. A maximum value is calculated to be 44.1 mA/cm² for MgF₂/TiO₂-coated, V-grooved and passivated surfaces with SiO₂ thicknesses of less than 10 nm

Keywords

antireflection coatings; elemental semiconductors; ellipsometry; passivation; reflectometry; refractive index measurement; silicon; solar cells; MgF₂-TiO₂; Si solar cells; SiO₂; TiO₂; TiO₂-based antireflection films; V-grooved surfaces; annealing temperature; antireflection films; chemically deposited films; measurement wavelength; short-circuit current density; spectroscopic ellipsometry; spectroscopic refractive indices; surface reflection spectra; surface-passivated crystalline silicon solar cells; Annealing; Crystallization; Ellipsometry; Optical films; Photovoltaic cells; Reflection; Semiconductor films; Silicon; Spectroscopy; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE

Conference_Location

Kissimmee, FL

Type

conf

DOI

10.1109/PVSC.1990.111649

Filename

111649