DocumentCode :
2610539
Title :
Experimental measurement of the intrinsic carrier concentration of silicon
Author :
Sproul, A. ; Green, M.
Author_Institution :
Solar Photovoltaic Lab., New South Wales Univ., Kensington, NSW, Australia
fYear :
1990
fDate :
21-25 May 1990
Firstpage :
380
Abstract :
A recent review suggests that the commonly cited value of 1.45×1010 cm-3 for the silicon intrinsic carrier concentration at 300 K is inconsistent with the best available experimental data. An alternative value of 1.08×10-10 cm-3 is reported with an estimated one standard deviation uncertainty of only 3%. This appears to be the most accurate experiment determination of this parameter at any temperature. Measurements with similar accuracy at temperatures in the range of 275 to 375 K are also reported for PERC Si solar cells
Keywords :
carrier density; elemental semiconductors; silicon; solar cells; 275 to 375 K; PERC Si solar cells; Si solar cells; intrinsic carrier concentration; Conductivity; Photovoltaic cells; Photovoltaic systems; Silicon; Solar power generation; Surface treatment; Temperature control; Temperature distribution; Temperature measurement; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
Type :
conf
DOI :
10.1109/PVSC.1990.111652
Filename :
111652
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2610539
بازگشت