TCAD simulation vs. experimental results in FDSOI technology: From advanced mobility modeling to 6T-SRAM cell characteristics prediction

Author

Jaud, Marie-Anne ; Scheiblin, Pascal ; Martinie, Sébastien ; Cassé, Mikaël ; Rozeau, Olivier ; Dura, Julien ; Mazurier, Jérôme ; Toffoli, Alain ; Thomas, Olivier ; Andrieu, François ; Weber, Olivier

Author_Institution

LETI, CEA, Grenoble, France

fYear

2010

fDate

6-8 Sept. 2010

Firstpage

283

Lastpage

286

Abstract

We present TCAD simulations based on advanced mobility modeling including Surface Roughness (SR) and Remote Coulomb Scattering (RCS) effects, quantum correction and short channel effects. From these calibrated models, FDSOI 6T-SRAM cells are simulated and compared to experimental data. The very good agreement achieved between simulations and electrical data on both mobility and electrical figures of merit (device and SRAM) offers major opportunities for predictive design based on TCAD simulations.

Keywords

SRAM chips; carrier mobility; integrated circuit design; integrated circuit modelling; quantum interference phenomena; silicon-on-insulator; surface roughness; technology CAD (electronics); 6T-SRAM cell characteristics prediction; FDSOI technology; TCAD simulations; advanced mobility modeling; electrical figure of merit; fully depleted silicon on insulator; mobility figure of merit; predictive design; quantum correction effects; remote Coulomb scattering effects; short channel effects; surface roughness effects; technology computer-aided design; Computer architecture; Data models; Logic gates; Noise; Random access memory; Semiconductor process modeling; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on

Conference_Location

Bologna

ISSN

1946-1569

Print_ISBN

978-1-4244-7701-2

Electronic_ISBN

1946-1569

Type

conf

DOI

10.1109/SISPAD.2010.5604506

Filename

5604506