Title :
Cd1-xZnxTe films obtained by the solid-state reaction of elemental layers
Author :
Basol, Bulent ; Kapur, Vijay ; Mitchell, Richard
Author_Institution :
Int. Solar Electr. Technol., Inglewood, CA, USA
Abstract :
Cd1-xZnxTe films of various stoichiometries have been prepared by the two-stage process. This technique involves depositing thin layers of Te, Cd, and Zn onto selected substrates, and then reacting these layers to form the compound film. Cd1-xZn xTe films of compositions changing from CdTe to ZnTe have been successfully grown by the two-stage technique on glass and ITO-coated glass substrates. Good quality Cd1-xZnxTe layers need to be deposited on CdS-coated transparent substrates for front-wall solar cell fabrication. This is possible for the case of CdTe layers. Zn concentrations higher than 25 at.% in the absorber layer gave rise to films with poor morphology and a highly diffused Cd1-xZnxTe/CdS interface. The reason for this behavior is shown to be the exchange reaction between the Zn in the absorber film and the Cd in the CdS window layer
Keywords :
II-VI semiconductors; cadmium compounds; solar cells; zinc compounds; Cd1-xZnxTe-CdS solar cells; absorber layer; front-wall solar cell fabrication; solid-state reaction; window layer; Fabrication; Furnaces; Glass; Photonic band gap; Photovoltaic cells; Solar energy; Solid state circuits; Substrates; Tellurium; Zinc compounds;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111675
