Realisation of very short wet etched mirror lasers in GRINSCH-QW GaAs-based structure

Author

Karouta, F. ; Wellen, J.S. ; Abu-Zeid, O. ; Acket, G.A. ; van der Vleuten, W.C.

Author_Institution

Dept. of Electr. Eng., Eindhoven Univ. of Technol., Netherlands

fYear

1996

fDate

8-11 Dec 1996

Firstpage

50

Lastpage

53

Abstract

Very short wet chemically etched mirror lasers reveal that devices show laser operation down till 29 μm of cavity length at a threshold current of 70 mA, exhibiting an output power of 0.5 mW. These devices lase simultaneously at two or three different wavelengths namely around 855, 830 and 805 nm. The number of peaks is related to the current

Keywords

III-V semiconductors; etching; gallium arsenide; gradient index optics; laser cavity resonators; laser mirrors; laser transitions; optical fabrication; quantum well lasers; 0.5 mW; 29 mum; 70 mA; 805 nm; 830 nm; 855 nm; GRINSCH-QW GaAs-based structure; GaAs-In_0.2Ga_0.8As-Al_0.2Ga _0.8As; cavity length; laser operation; output power; peaks; threshold current; very short wet etched mirror lasers; Chemical lasers; Chemical processes; Gallium arsenide; Laser theory; Mirrors; Monolithic integrated circuits; Power lasers; Threshold current; Waveguide lasers; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-3374-8

Type

conf

DOI

10.1109/COMMAD.1996.610063

Filename

610063