DocumentCode :
2611192
Title :
Individual losses in thin-film CdTe solar cells
Author :
Tavakolian, Hossein ; Sites, James
Author_Institution :
Dept. of Phys., Colorado State Univ., Fort Collins, CO, USA
fYear :
1990
fDate :
21-25 May 1990
Firstpage :
556
Abstract :
Thin-film polycrystalline CdTe solar cells have been analyzed using current-voltage, reflection, quantum efficiency, and capacitance measurements. The objective is to quantify the individual current and voltage losses in cells from different sources. Compared to an optimum photocurrent density of 30.5 mA/cm2, they typically lose 2 mA/cm2 to reflection, 2-3 to uncollected CdTe carriers, and 2-6 to window-layer absorption. Voltage loss at maximum power is of the order of 200 mV because of the polycrystallinity, 100 mV due to light-dark differences in forward current, and 50 mV resulting from series resistance. Individual voltage loss values vary considerably among samples. The capacitance measurement implies that a significant fraction of the CdTe is a highly compensated i-layer and that the extraneous bandgap state density is above 1011 eV-1 cm-2 under operating conditions
Keywords :
II-VI semiconductors; cadmium compounds; energy gap; losses; photoconductivity; semiconductor thin films; solar cells; CdTe; bandgap state density; capacitance measurements; compensated i-layer; current losses; current-voltage measurements; forward current; light-dark differences; photocurrent density; quantum efficiency measurement; reflection measurement; series resistance; thin-film; voltage losses; window-layer absorption; Crystallization; Gallium arsenide; Lighting; MOCVD; Optical reflection; Photonic band gap; Photovoltaic cells; Testing; Transistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
Type :
conf
DOI :
10.1109/PVSC.1990.111683
Filename :
111683
Link To Document :
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