Title :
Reliability Hazards of Silver-Aluminum Substrate Bonds in MOS Devices
Author :
Shukla, Rama ; Deo, Joe Singh
Author_Institution :
Package Technology, Intel Corporation, 3065 Bowers Avenue, Santa Clara, CA 95051, (408) 987-6256
Abstract :
Reliability of Aluminum wires bonded ultrasonically to silver metallization in cerdips was investigated, using a novel technique of in situ resistance measurement at high temperatures in controlled atmosphere. The failure mechanism in dry air was found to be due to selective oxidation of the Ag-Al alloy and activation energies were measured for various atmospheres. Moisture was shown to decrease the activation energy.
Keywords :
Aluminum; Atmosphere; Bonding; Electrical resistance measurement; Hazards; MOS devices; Metallization; Silver; Temperature measurement; Wires;
Conference_Titel :
Reliability Physics Symposium, 1982. 20th Annual
Conference_Location :
San Diego, NV, USa
DOI :
10.1109/IRPS.1982.363032
