Title :
Harmonic cancellation in monolithic AlGaAs/GaAs Npn/Pnp HBT push-pull pairs
Author :
Slater, David B., Jr. ; Enquist, Paul M. ; Hutchby, James A. ; Morris, Arthur S. ; Trew, Robert J.
Author_Institution :
Res. Triangle Inst., Research Triangle Park, NC, USA
Abstract :
Operational testing of AlGaAs/GaAs monolithic microwave Npn/Pnp HBTs in a push-pull configuration, fabricated by OMVPE, is reported. A non-self-aligned process was used to co-fabricate devices having 2.6-μm×20-μm emitters. The ft and f max of the Npn (Pnp) were 39 (18) and 40 (21) GHz, respectively. Complementary push-pull pairs were tested up to a fundamental frequency of 10 GHz. Operation of the pair demonstrated power combination at the fundamental and cancellation at the second harmonic
Keywords :
III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; harmonics; heterojunction bipolar transistors; microwave amplifiers; vapour phase epitaxial growth; 10 GHz; 18 to 40 GHz; 2.6 micron; AlGaAs-GaAs; HBTs; OMVPE; complementary push-pull amplifiers; power combination; push-pull pairs; second harmonic cancellation; semiconductors; Contracts; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Microwave devices; Monolithic integrated circuits; Power harmonic filters; Power system harmonics; Testing; Transformers;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0491-8
DOI :
10.1109/CORNEL.1991.169999
