Title :
Degradation of Thin-Gate Mosfet´s under High Electric Field Stress
Author :
Ishiuchi, H. ; Matsumoto, Y. ; Mochizuki, T. ; Sawada, S. ; Ozawa, O.
Author_Institution :
Toshiba Corporation, Semiconductor Device Engineering Laboratory, 72, Horikawa-cho, Saiwai-ku, Kawasaki, Japan, 210
Abstract :
A new type of instability of threshold voltage and transconductance in MOSFET´s under high electric field stress (¿. 7 MV/cm) across the gate oxide is reported. A quantitative model which explains the physical mechanism of these phenomena, and also predicts the intrinsic limitation of the thin gate oxide device is also proposed.
Keywords :
Current measurement; Degradation; Electrons; MOS capacitors; MOSFET circuits; Stress; Substrates; Testing; Threshold voltage; Transconductance;
Conference_Titel :
Reliability Physics Symposium, 1982. 20th Annual
Conference_Location :
San Diego, NV, USa
DOI :
10.1109/IRPS.1982.361933
