Title :
A non-quasi-static collector model for HBTs
Author :
Morris, Arthur S. ; Trew, Robert J.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
A large-signal non-quasi-static (NQS) model of a bipolar transistor collector current generator is discussed. It is generally valid for one-dimensional space charge region transport with moving boundaries. Such a model is necessary for self-consistency near the transit time of the region when the quasi-static approximation fails. The model has been applied to an idealized collector region and results are presented. The large signal modulation of the collector depletion region leads to significant harmonic generation for optimized heterojunction bipolar transistors (HBTs) where the majority of the transit time is in the collector. Fundamental current gain is also seen for some load terminations
Keywords :
heterojunction bipolar transistors; semiconductor device models; space charge; HBTs; collector current generator; collector depletion region; collector model; current gain; harmonic generation; heterojunction bipolar transistors; large signal modulation; load terminations; moving boundaries; nonquasistatic model; one-dimensional space charge region transport; transit time; Capacitance; Circuit simulation; Delay; Frequency; Heterojunction bipolar transistors; Laboratories; Power engineering and energy; Power engineering computing; Power generation; Power transistors;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0491-8
DOI :
10.1109/CORNEL.1991.170006
