Title :
High gain W-band InGaAs-InAlAs-InP HEMTs for low noise W-band applications
Author :
Streit, Dwight C. ; Tan, Kin L. ; Liu, Po-Hsin ; Chow, P. Daniel
Author_Institution :
TRW, Redondo Beach, CA, USA
Abstract :
The fabrication of lattice-matched InGaAs-InAlAs-InP high-electron-mobility transistors (HEMTs) with excellent W-band performance is reported. At 93 GHz a device minimum noise figure of 1.7 dB with 7.7 dB associated gain was measured for 0.15-μm T-gate HEMTs. A maximum cutoff frequency of 200 GHz was obtained, and the 12.2-dB small-signal gain measured at 94 GHz extrapolates to a maximum frequency of oscillation of 380 GHz. A two-stage MIC amplifier demonstrated a minimum noise figure of 3.0 dB and 16.0 dB associated gain at 93.4 GHz using these devices. A single-ended active mixer was also fabricated using lattice-matched 0.15-μm HEMTs, and a conversion gain of 2.4 dB with 7.3 dB single-sideband noise figure at 94 GHz was measured
Keywords :
III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.15 micron; 1.7 to 7.3 dB; 2.4 to 16 dB; 93 to 380 GHz; EHF; HEMTs; InGaAs-InAlAs-InP; MM-wave operation; T-gate; fabrication; high gain device; high-electron-mobility transistors; lattice-matched; low noise W-band applications; millimetre-wave type; single-ended active mixer; two-stage MIC amplifier; Cutoff frequency; Fabrication; Frequency measurement; Gain measurement; HEMTs; MODFETs; Microwave integrated circuits; Noise figure; Noise measurement; Performance gain;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0491-8
DOI :
10.1109/CORNEL.1991.170015
