Title :
Integrated circuits using resonant-tunneling hot electron transistors (RHETs)
Author :
Imamura, K. ; Takatsu, M. ; Mori, T. ; Adachihara, T. ; Ohnishi, H. ; Muto, S. ; Yokoyama, N.
Author_Institution :
Fujitsu Ltd., Atsugi, Japan
Abstract :
Research activities to improve the DC and RF performance of RHETs are reviewed. A description is given of RHET integrated circuits, including two-input and three-input logic gates. Using these logic gates and new collector barrier structures, a RHET latch circuit and a full adder have successfully been demonstrated at 77 K and require only one half to one quarter of the number of transistors needed for a conventional full adder
Keywords :
bipolar integrated circuits; hot electron transistors; integrated logic circuits; logic gates; resonant tunnelling devices; 77 K; DC performance; RF performance; RHET; collector barrier structures; full adder; integrated circuits; latch circuit; resonant-tunneling hot electron; three-input logic gates; Adders; Circuits; Delay effects; Electrons; Gallium arsenide; Logic gates; Resonance; Resonant tunneling devices; Transistors; Voltage;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0491-8
DOI :
10.1109/CORNEL.1991.170029
