Title :
[Copyright notice]
Abstract :
The following topics are dealt with: semiconductor process; semiconductor device; graphene; metallizations; interconnects; nanoelectronics; process deposition; etching; nanowire; technology CAD; CMOS; memory; electromigration; compact modeling; device simulation; sensors; and MEMS.
Keywords :
CMOS integrated circuits; circuit simulation; electromigration; etching; graphene; integrated circuit interconnections; micromechanical devices; nanoelectronics; nanowires; semiconductor device metallisation; semiconductor device models; sensors; technology CAD (electronics); CMOS; MEMS; compact modeling; device simulation; electromigration; etching; graphene; interconnects; memory; metallizations; nanoelectronics; nanowire; process deposition; semiconductor device; semiconductor process; sensors; technology CAD;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
Conference_Location :
Bologna
Print_ISBN :
978-1-4244-7701-2
DOI :
10.1109/SISPAD.2010.5604598
