DocumentCode :
2613569
Title :
A study of test system for thermal resistance of IGBT
Author :
Huang, Yueqiang ; Lü, Changzhi ; Xie, Xuesong ; Fan, Yu ; Zhang, Jian ; Meng, Xianlei
Author_Institution :
Reliability Phys. Lab., Beijing Univ. of Technol., Beijing, China
fYear :
2010
fDate :
22-24 Sept. 2010
Firstpage :
312
Lastpage :
315
Abstract :
IGBTs have the advantages of BJTs and MOSFETs, they are widely used in household appliances and industrial production. But thermal problem has affected the development of IGBT, so its accurate measurement of thermal resistance and temperature rise is very important. In this paper, we propose a new test system for thermal resistance of IGBT, in this test system, we use digital approach, choose the voltage between collector and emitter with constant current and gate-collector short as heat-sensitive parameter, the results show that this system has the advantages of accuracy and good measurement reproducibility, and it has better feasibility.
Keywords :
insulated gate bipolar transistors; thermal resistance; IGBT; gate-collector; heat-sensitive parameter; insulated gate bipolar transistor; thermal resistance; Current measurement; Electrical resistance measurement; Heating; Semiconductor device measurement; Temperature measurement; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics and Electronics (PrimeAsia), 2010 Asia Pacific Conference on Postgraduate Research in
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-6735-8
Electronic_ISBN :
978-1-4244-6736-5
Type :
conf
DOI :
10.1109/PRIMEASIA.2010.5604898
Filename :
5604898
Link To Document :
بازگشت