Title :
Comparative Electromigration Tests of Al-Cu Alloys
Author :
Merchant, P. ; Cass, T.
Author_Institution :
Hewlett-Packard Laboratories, 3500 Deer Creek Rd., Palo Alto, CA. 94304. (415) 857-5428
Abstract :
Al-Cu films, obtained from several sputter deposition processes have been subjected to accelerated electromigration life tests. The resultant median times to failure (ranging from 15-1600 h) have been compared with the microstructure and alloy distributions in the films as measured by He backscattering spectroscopy, transmission electron microscopy and diffraction and X-ray diffraction. We conclude that the film texture and location of copper in the films have a strong influence on their electromigration resistance.
Keywords :
Backscatter; Electrical resistance measurement; Electromigration; Helium; Life estimation; Life testing; Microstructure; Spectroscopy; Sputtering; X-ray diffraction;
Conference_Titel :
Reliability Physics Symposium, 1984. 22nd Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1984.362056