DocumentCode
2613624
Title
Electromigration Study of the Al-Cu/Ti/Al-Cu System
Author
Iyer, Subramanian S. ; Ting, Chung-yu
Author_Institution
IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
fYear
1984
fDate
30773
Firstpage
273
Lastpage
278
Abstract
We have investigated unpassivated Al-Cu(4.5%)/Ti/Al-Cu laminated structures for their electromigration behavior for linewidths between 5 ¿ and 1.5 ¿ We find that although line opens are not the dominant failure mode, significant mass accumulation occurs all along the line leading to the real possibility of extrusion induced shorts. In our experiments laminated structures had lifetimes in excess of conventional Al-Cu lines by at least a factor of 10. Cu migration takes place in the early part of the stripe life. Al migration occurs preferentially from the top layer. Furthermore, a decrease of the line resistance, unlike in conventional structures, is observed during current stress. The Ti intermetallic layer does not show any motion.
Keywords
Annealing; Circuit testing; Condition monitoring; Conductivity; Current density; Electromigration; Integrated circuit interconnections; Intermetallic; Silicon; Surfaces;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1984. 22nd Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1984.362058
Filename
4208582
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