• DocumentCode
    2613624
  • Title

    Electromigration Study of the Al-Cu/Ti/Al-Cu System

  • Author

    Iyer, Subramanian S. ; Ting, Chung-yu

  • Author_Institution
    IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
  • fYear
    1984
  • fDate
    30773
  • Firstpage
    273
  • Lastpage
    278
  • Abstract
    We have investigated unpassivated Al-Cu(4.5%)/Ti/Al-Cu laminated structures for their electromigration behavior for linewidths between 5 ¿ and 1.5 ¿ We find that although line opens are not the dominant failure mode, significant mass accumulation occurs all along the line leading to the real possibility of extrusion induced shorts. In our experiments laminated structures had lifetimes in excess of conventional Al-Cu lines by at least a factor of 10. Cu migration takes place in the early part of the stripe life. Al migration occurs preferentially from the top layer. Furthermore, a decrease of the line resistance, unlike in conventional structures, is observed during current stress. The Ti intermetallic layer does not show any motion.
  • Keywords
    Annealing; Circuit testing; Condition monitoring; Conductivity; Current density; Electromigration; Integrated circuit interconnections; Intermetallic; Silicon; Surfaces;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1984. 22nd Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1984.362058
  • Filename
    4208582