Title :
Low Leakage Current Polysilicon Oxide Grown by Two-Step Oxidation
Author :
Mikata, Y. ; Mori, S. ; Shinada, K. ; Usami, T.
Author_Institution :
Semiconductor Device Engineering Laboratory, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki, 210 Japan. (044)-511-2111
Abstract :
The decrease in polysilicon oxide leakage current was experimentally investigated in the range of the oxide thickness from 14nm to 60nm. As a result, it was concluded that the suppression of the oxidation rate at an early stage of the oxidation reduced the conductance of the polysilicon oxide.
Keywords :
Capacitors; Current measurement; Dielectric devices; EPROM; Laboratories; Leakage current; Oxidation; Semiconductor devices; Silicon; Temperature measurement;
Conference_Titel :
Reliability Physics Symposium, 1985. 23rd Annual
Conference_Location :
Orlando, FL, USA
DOI :
10.1109/IRPS.1985.362071
