Title :
Failure Analysis and Failure Mechanisms of High Voltage (530V) Gated Diode Crosspoint Arrays
Author :
Tse, P.K. ; Gammel, J.C. ; Schimmel, D.G. ; Becker, W.H. ; Ballantyne, J.P. ; Riley, Timothy J.
Author_Institution :
AT&T Bell Laboratories, 2525 North 12th Street, Reading, PA 19604
Abstract :
We analyzed the failure modes and failure mechanisms of high voltage (530V) Gated Diode Crosspoint arrays used in the 5ESS¿ switching system. Electrical measurements and defect etching results defined the failure patterns of field returns. Laboratory simulations were developed to reproduce each type of failure. The theory of the underlying mechanisms will be presented.
Keywords :
Analytical models; Anodes; Cathodes; Diodes; Etching; Failure analysis; Interference; Silicon; Switches; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1986. 24th Annual
Conference_Location :
Anaheim, CA, USA
DOI :
10.1109/IRPS.1986.362121
