Title :
Power GaAs FET RF Life Test using Temperature-Compensated Electrical Stressing
Author :
Russell, K.J. ; Dhiman, J.K.
Author_Institution :
Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, CA 91109. (818) 354-6080
Abstract :
GaAs FETs were aged in RF operation, while keeping the electrical stress on the WETs like that in a typical application. Lifetimes measured were significantly lower than those predicted by life tests using dc bias only. Significant dependence of lifetimes upon the wafer process lot was found. Voltage screening did not provide more reliable devices.
Keywords :
Aging; FETs; Gallium arsenide; Life testing; Performance evaluation; Power generation; Radio frequency; Stress; Temperature; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1986. 24th Annual
Conference_Location :
Anaheim, CA, USA
DOI :
10.1109/IRPS.1986.362126
