DocumentCode :
2615967
Title :
Dual-gate (FinFET) and tri-Gate MOSFETs: simulation and design
Author :
Breed, A. ; Roenker, K.P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Cincinnati Univ., OH, USA
fYear :
2003
fDate :
10-12 Dec. 2003
Firstpage :
150
Lastpage :
151
Abstract :
The continued downward scaling of silicon MOSFET device dimensions below one tenth micron has presented new and serious challenges for future integrated circuit applications. Accordingly, new MOSFET structures, such as the dual-gate (FinFET) and the tri-Gate transistor, have been proposed to replace the conventional planar MOSFET. These devices are compatible with conventional silicon integrated circuit processing, but offer superior performance as the device is scaled into the nanometer range. However, the physics of the MOSFET´s operation in these new device structures is somewhat different. This study aims to investigate the differences in performance of these two devices and their device design using a commercial, three-dimensional numerical simulator ATLAS from Silvaco International.
Keywords :
MOSFET; elemental semiconductors; semiconductor device models; silicon; MOSFET structures; Si; conventional silicon integrated circuit processing; dual-gate finFET; silicon; simulation; trigate MOSFET; trigate transistor; Application software; Application specific integrated circuits; Circuit simulation; Computational modeling; Computer science; FinFETs; MOSFETs; Nanoscale devices; Silicon; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
Type :
conf
DOI :
10.1109/ISDRS.2003.1272037
Filename :
1272037
Link To Document :
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