Recent progress in δ-doped compound semiconductors

Author

Li, G. ; Jagadish, C.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

fYear

1996

fDate

8-11 Dec 1996

Firstpage

126

Lastpage

129

Abstract

We report recent progress in growth of δ-doped compound semiconductors by metal organic vapour phase epitaxy (MOVPE). The limiting processes are discussed based on parametric studies of δ-doping. Growth parameters capable of effectively controlling the δ-doping concentration are revealed in the use of SiH₄, DMZn or TMAl as the doping precursor. The experimental results show that high quality δ-doped layers in III-Vs can be grown in MOVPE for device applications

Keywords

III-V semiconductors; aluminium compounds; carrier density; doping profiles; gallium arsenide; secondary ion mass spectra; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; δ-doping concentration control; AlGaAs:C; AlGaAs:Si; AlGaAs:Zn; III-V semiconductors; MOVPE; SIMS profiles; carrier profiles; compound semiconductors; device applications; dimethylzinc; doping precursor; metal organic vapour phase epitaxy; parametric studies; trimethylaluminium; Atomic layer deposition; Chemical processes; Electrons; Epitaxial growth; Epitaxial layers; Gallium arsenide; Molecular beam epitaxial growth; Semiconductor device doping; Temperature distribution; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on

Conference_Location

Canberra, ACT

Print_ISBN

0-7803-3374-8

Type

conf

DOI

10.1109/COMMAD.1996.610088

Filename

610088