Title :
Tunable semiconductor Sinai billiards
Author :
Taylor, R.P. ; Newbury, R. ; Sachrajda, A.S. ; Feng, Y. ; Coleridge, P.T.
Author_Institution :
Inst. for Microstruct. Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
Abstract :
We describe a gate-defined semiconductor billiard which undergoes an evolution from a square to Sinai geometry. We report remarkable fractal behaviour observed in the magnetoresistance which emerges during the transition and originates from `quantum chaos´ processes
Keywords :
chaos; fractals; magnetoresistance; nanotechnology; quantum interference devices; quantum interference phenomena; tuning; two-dimensional electron gas; Sinai geometry; VLSI; fractal behaviour; gate-defined semiconductor billiard; magnetoresistance; metal interconnects; nanostructure gate architecture; quantum chaos; quantum interference effects; square geometry; tunable semiconductor Sinai billiards; Chaos; Councils; Electrons; Etching; Fractals; Geometry; Insulation; Optical scattering; Particle scattering; Physics;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610099
