Title :
Proton irradiation damages in CuInSe2 thin film solar cell materials by a piezoelectric photothermal spectroscopy
Author :
Akaki, Y. ; Ohryo, N. ; Yoshino, K. ; Kawakita, S. ; Imaizumi, M. ; Niki, S. ; Sakurai, K. ; Ishizuka, S. ; Ohshima, T. ; Ikari, T.
Author_Institution :
Dept. of Electr. & Electron. Eng., Miyazaki Univ., Japan
Abstract :
Copper indium gallium di-selenide (CIGS), a thin film solar cell material has its limitations with many vacancies and defects. It has been investigated for its effects on the radiation damage and its recovery mechanisms. The complex end materials of the CIGS such as CuInSe2 or CuGaSe2 has been studied in this article. In order to detect its defect level a piezoelectric photo-thermal spectroscopy (PPTS) has been developed to monitor its nonradiative relaxation pathway generated by impurity or defect level. Such thin films were studied using electron de-excitation processes to investigate the effect of the proton irradiation of the optical properties of very thin layer materials of CuInSe2 thin films.
Keywords :
copper compounds; gallium compounds; impurity states; indium compounds; photothermal spectroscopy; piezoelectric semiconductors; proton effects; radiation effects; recovery; semiconductor thin films; solar cells; ternary semiconductors; vacancies (crystal); CuGaSe2; CuInSe2; CuInSe2 thin film solar cell; copper indium gallium di-selenide; defect level; electron de-excitation processes; impurity; nonradiative relaxation; optical properties; piezoelectric photo-thermal spectroscopy; piezoelectric photothermal spectroscopy; proton irradiation; radiation damage; recovery mechanisms; vacancies; Copper; Gallium compounds; Impurities; Indium; Monitoring; Optical films; Photovoltaic cells; Protons; Spectroscopy; Transistors;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272189
