Title :
Single-electron turnstile using Si-wire charge-coupled devices
Author :
Fujiwara, Akira ; Zimmerman, N.M. ; Ono, Yukinori ; Takahash, Yasuo
Author_Institution :
NTT Basic Res. Lab., NTT Corp., Atsugi, Japan
Abstract :
This paper reports a quantized current in a Si-wire charge-coupled device (CCD), which simply consists of a Si-wire channel with gates. Based on a simple gate-voltage control of tunnel barriers, current plateaus were observed successfully at 20 K with frequencies up to 100 MHz. SEM observations were made for the fabricated device, it shows that the charge island is mainly coupled to the upper and wide gate.
Keywords :
charge-coupled devices; elemental semiconductors; scanning electron microscopy; semiconductor quantum wires; silicon; single electron devices; 20 K; CCD; SEM; Si; Si-wire channel; Si-wire charge coupled devices; charge island; current plateaus; gate-voltage control; quantized current; single electron turnstile; tunnel barriers; Charge transfer; Clocks; Cryptography; Electrons; Frequency; Laboratories; NIST; Pulse modulation; Tunneling; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2003 International
Print_ISBN :
0-7803-8139-4
DOI :
10.1109/ISDRS.2003.1272208
