DocumentCode :
2620077
Title :
The electrical behavior of the fundamental high frequency (150 MHz) quartz crystal unit in the plasmatic environment
Author :
Tanaka, M. ; Ugajin, T. ; Araki, N. ; Oomura, Y.
Author_Institution :
Meidensha Corp., Tokyo, Japan
fYear :
1997
fDate :
28-30 May 1997
Firstpage :
758
Lastpage :
764
Abstract :
Both photolithography technique and chemical etching process were experimentally employed for producing 150 MHz rectangular AT-cut crystal resonators. A plasma treatment was employed for a frequency adjustment process by etching gold (Au) electrode films. A large frequency shift from a designed frequency was observed. In this paper, the reasons are electrically and chemically explained why the large frequency shifts occurred after a plasma treatment
Keywords :
crystal resonators; photolithography; quartz; sputter etching; 150 MHz; Au; SiO2; chemical etching process; electrical behavior; frequency adjustment process; frequency shift; fundamental high frequency quartz crystal unit; photolithography technique; plasma treatment; plasmatic environment; rectangular AT-cut crystal resonators; Capacitance; Chemicals; Electrodes; Etching; Lithography; Plasma applications; Plasma chemistry; Resonance; Resonant frequency; Tuning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Frequency Control Symposium, 1997., Proceedings of the 1997 IEEE International
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-3728-X
Type :
conf
DOI :
10.1109/FREQ.1997.638784
Filename :
638784
Link To Document :
بازگشت