Title :
Quantum noise in resonant tunnelling
Author :
Sun, H.B. ; Milburn, G.J.
Author_Institution :
Dept. of Phys., Queensland Univ., Brisbane, Qld., Australia
Abstract :
A master equation method is used to describe current noise in resonant tunnelling diodes which contain a single bound state in the well. The state is below the Fermi level of the emitter and coupled to two electron reservoirs by quantum tunnelling through the two barriers. The two-time correlation function for the classical current in the device is calculated in terms of the fundamental quantum stochastic processes in the well. The results reproduce those previously obtained by a nonequilibrium Green´s function approach. The model shows that the quantum Markov treatment may be applied to mesoscopic electronic systems with more succinct formalism
Keywords :
bound states; master equation; mesoscopic systems; quantum interference devices; quantum noise; resonant tunnelling diodes; semiconductor device models; semiconductor device noise; stochastic processes; Fermi level; current noise; electron reservoirs; master equation method; mesoscopic electronic systems; model; nonequilibrium Green´s function approach; quantum Markov treatment; quantum noise; quantum stochastic processes; quantum tunnelling; resonant tunnelling diodes; single bound state; two-time correlation function; Acoustical engineering; Diodes; Electron optics; Equations; Optical noise; Optical sensors; Quantum mechanics; Reservoirs; Resonant tunneling devices; Stochastic processes;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610113