Title :
All-silicon nonlinear transmission line using optimized Schottky diodes
Author :
Birk, M. ; Kibbel, H. ; Rupp, M. ; Schmacher, H.
Author_Institution :
Dept. of Electron. Devices & Circuits, Ulm Univ., Germany
Abstract :
Nonlinear Transmission Lines (NLTL) have been fabricated so far on GaAs substrates only. Recently, we were able to demonstrate a working nonlinear transmission line for the first time on high resistivity silicon proving the applicability of the NLTL concept to silicon millimeter wave integrated circuits (SIMMWICS). We have significantly improved our previous results by using optimized Schottky varactors. The falltime of 74 ps of a 4 GHz sine wave was compressed to 15 ps at the output of the NLTL, doubling the equivalent bandwidth of our first result.
Keywords :
MIMIC; Schottky diodes; coplanar waveguide components; elemental semiconductors; silicon; transmission line theory; varactors; MM-wave ICs; Schottky varactors; Si; Si MIMIC; Si nonlinear transmission line; high resistivity Si substrate; millimeter wave integrated circuits; optimized Schottky diodes; Capacitance; Conductivity; Distributed parameter circuits; Gallium arsenide; Impedance; Millimeter wave transistors; Schottky diodes; Silicon; Transmission lines; Voltage;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 1998. Digest of Papers. 1998 Topical Meeting on
Conference_Location :
Ann Arbor, MI, USA
Print_ISBN :
0-7803-5288-2
DOI :
10.1109/SMIC.1998.750195
