Title :
Semi-insulating silicon substrates for silicon based RF integrated circuits
Author :
Wang, R. ; Campell, S.A. ; Tan, R. ; Meyer, J. ; Cai, Y.
Author_Institution :
Dept. of Electr. & Comput. Eng., Minnesota Univ., Minneapolis, MN, USA
Abstract :
Semi-insulating silicon wafers have been prepared by gold doping and the use of a buried silicon nitride diffusion barrier. Electrical performance is comparable to semi-insulating GaAs.
Keywords :
MMIC; UHF integrated circuits; annealing; deep levels; diffusion barriers; elemental semiconductors; gold; semiconductor doping; silicon; substrates; wafer bonding; Au doping; RF integrated circuits; RFIC; Si based RF ICs; Si/sub 3/N/sub 4/; Si:Au; anneal optimisation; buried Si/sub 3/N/sub 4/ diffusion barrier; deep level selection; semi-insulating Si substrates; wafer bonding; Conductivity; Dielectric substrates; Doping; Gold; Impurities; Propagation losses; Radio frequency; Radiofrequency integrated circuits; Silicon; Temperature;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 1998. Digest of Papers. 1998 Topical Meeting on
Conference_Location :
Ann Arbor, MI, USA
Print_ISBN :
0-7803-5288-2
DOI :
10.1109/SMIC.1998.750213
