DocumentCode :
2622762
Title :
Self-bias for Class B bipolar transistors
Author :
McRory, J.G. ; Johnston, R.H.
Author_Institution :
TRLabs, Calgary, Alta, Canada
Volume :
2
fYear :
1996
fDate :
26-29 May 1996
Firstpage :
855
Abstract :
It is well recognized that the BJT Class B amplifier´s conduction angle and gain are dependent on the amplifier´s input power level. This dependence is most apparent at lower input signal levels where the transistor is barely turned on. This paper presents an alternative bias network to be used with Class B BJT amplifiers which will compensate for low input power level, resulting in a more constant conduction angle, power gain and input impedance. The results of a simulation experiment which compares the performance of two Class B DC bias circuits for bipolar power transistors as used in a single ended resistive Class B power amplifier are examined
Keywords :
circuit analysis computing; power amplifiers; BJT; Class B bipolar transistors; DC bias circuits; bias network; bipolar power transistors; conduction angle; input impedance; input power level; low input power level; power gain; self bias; simulation experiment; single ended resistive power amplifier; Bipolar transistors; Bismuth; Circuit simulation; Diodes; Impedance matching; Load modeling; Power amplifiers; Power generation; Power transistors; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical and Computer Engineering, 1996. Canadian Conference on
Conference_Location :
Calgary, Alta.
ISSN :
0840-7789
Print_ISBN :
0-7803-3143-5
Type :
conf
DOI :
10.1109/CCECE.1996.548287
Filename :
548287
Link To Document :
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