Title :
14.7 A 300GHz frequency synthesizer with 7.9% locking range in 90nm SiGe BiCMOS
Author :
Pei-Yuan Chiang ; Zheng Wang ; Momeni, Omeed ; Heydari, Payam
Author_Institution :
Univ. of California, Irvine, Irvine, CA, USA
Abstract :
The THz/sub-mm-Wave band is known to provide unique applications in spectroscopy, imaging and high-data-rate wireless communication. An accurate THz source is essential in coherent communications, radar systems, and frequency metrology. Recently, THz sources based on coupled VCOs with harmonic generation have been proposed [1]. However, open-loop signal sources exhibit severe frequency fluctuation, and are vulnerable to temperature/process/supply-induced frequency drift. The need for precise oscillation frequency with wide tuning range and low close-in phase noise calls for closed-loop topologies. Millimeter-Wave PLLs incorporating push-push VCOs have been demonstrated up to 164GHz [2] in silicon technology. [3] presented a 300GHz PLL with 0.12% locking range in III-IV technology.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; III-V semiconductors; frequency synthesizers; millimetre wave oscillators; phase locked loops; phase noise; voltage-controlled oscillators; BiCMOS; III-IV technology; SiGe; THz band; THz source; closed-loop topology; frequency 300 GHz; frequency metrology; frequency synthesizer; harmonic generation; high-data-rate wireless communication; locking range; millimeter-wave PLL; open-loop signal source; oscillation frequency; phase noise; push-push VCO; radar system; silicon technology; size 90 nm; sub-mm-wave band; Frequency measurement; Noise measurement; Phase measurement; Phase noise; Synthesizers; Voltage-controlled oscillators;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4799-0918-6
DOI :
10.1109/ISSCC.2014.6757426
