Title :
Low-frequency noise of 90 nm nFETs: hot-carrier degradation and deuterium effect
Author :
Erturk, M. ; Anna, R. ; Xia, T. ; Clark, W.F. ; Nexvton, K.M. ; Pekarik, J.J. ; Lamothe, C.J. ; Lacroix, M.R.
Author_Institution :
Dept. of Electr. Eng., Vermont Univ., Burlington, VT, USA
Abstract :
We show that the low-frequency noise (LFN) of 90 nm nFETs can increase considerably due to hot-carrier stress. Measurements reveal noise degradation for both linear and saturation regions of operation. The use of deuterium processing retards the noise degradation and improves the noise lifetime by more than 20×.
Keywords :
deuterium; field effect transistors; semiconductor device noise; thermal noise; 90 nm; D2; FET; deuterium processing; hot-carrier degradation; low-frequency noise; nFET; noise degradation; Degradation; Deuterium; Hot carrier effects; Hot carriers; Hydrogen; Low-frequency noise; Noise measurement; Passivation; Semiconductor device noise; Stress;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on
Print_ISBN :
0-7803-8703-1
DOI :
10.1109/SMIC.2004.1398184
