Title :
An 8.5 GHz SiGe-based amplifier using fully self-aligned double mesa SiGe HBTs
Author :
Lee, Kok-Yan ; Johnson, Brian N. ; Mohammadi, Saeed ; Bhattacharya, Pallab K. ; Katehi, Linda P B ; Ponchak, George
Author_Institution :
Michigan Univ., Ann Arbor, MI, USA
Abstract :
We report an 8.5 GHz fully integrated SiGe amplifier developed using a novel fully self-aligned double mesa HBT process technology. The common-base HBT demonstrates a Gmax > 14 dB and an fmax > 37 GHz. At 8.5 GHz, the small-signal gain of the amplifier is better than 4 dB, with input and output return loss of -10 dB and -5 dB, respectively. The amplifier is also shown to be unconditionally stable.
Keywords :
Ge-Si alloys; MMIC amplifiers; bipolar MMIC; bipolar analogue integrated circuits; circuit stability; heterojunction bipolar transistors; integrated circuit design; semiconductor technology; 10 dB; 5 dB; 8.5 GHz; MMIC design; MMIC fabrication; SiGe; double mesa silicon-germanium HBT; integrated amplifier; return loss; self-aligned double mesa HBT process; small-signal gain; Chemical technology; Etching; Germanium silicon alloys; Gold; Heterojunction bipolar transistors; Integrated circuit technology; MMICs; Monolithic integrated circuits; Scanning electron microscopy; Silicon germanium;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on
Print_ISBN :
0-7803-8703-1
DOI :
10.1109/SMIC.2004.1398232
