SPICE model for radiation hard silicon detectors

A SPICE model is proposed for the silicon radiation detectors experienced different irradiation doses and annealing processes. A windows program is developed to calculate the parameters of the SPICE model for any given irradiation scenario and automatically generate the SPICE model library. It includes the effects of radiation damages induced leakage current, effective acceptors and trapping. The mechanism of signal formation due to electron-hole generation and carrier trapping, the effect of finite detector thickness for leakage current and capacitance and the detector noise are implemented. The simulated or empirical values of implant strip resist, metal resist, coupling capacitance, inter strip capacitance and resistance are also incorporated for microstrip and pixel detectors. Therefore the charge collection efficiency, the signal noise ratio, the power consumption and for microstrip and pixel detectors the signal spread between adjacent cells and noise reduction of the distributed strip metal resistance for detector receiving any given irradiation dose and experienced any annealing can be simulated. The signal noise ratio or the equivalent noise charge can be optimized for preamplifier consisting of charge sensitive amplifier plus shaper. For the device parameter extraction silicon micro strip detectors made of n and p type silicon having high breakdown voltage and being radiation resistive are designed and manufactured, the characteristics before radiation test are shown.