Strained N-Channel FinFETs with 25 nm Gate Length and Silicon-Carbon Source/Drain Regions for Performance Enhancement

We report the demonstration of 25 nm gate length L_G tri-gate FinFETs with Si_0.99C_0.01 source and drain (S/D) regions. The strain-induced mobility enhancement due to the Si_0.99C_0.01 S/D leads to a drive current I_Dsat improvement of 20% at a fixed off-state current I_off of 1times10^-7 A/mum. With additional channel strain engineering, FinFETs incorporating Si_0.99C_0.01 S/D and a tensile-stress silicon nitride (SiN) capping etch-stop layer (ESL) achieve an I_Dsat enhancement of 56%