High Density and High Reliability Chain FeRAM with Damage-Robust MOCVD-PZT Capacitor with SrRuO3/IrO2 Top Electrode for 64Mb and Beyond

Author

Hidaka, O. ; Ozaki, T. ; Kanaya, H. ; Kumura, Y. ; Shimojo, Y. ; Shuto, S. ; Yamada, Y. ; Yahashi, K. ; Yamakawa, K. ; Yamazaki, S. ; Takashima, D. ; Miyakawa, T. ; Shiratake, S. ; Ohtsuki, S. ; Kunishima, I. ; Nitayama, A.

Author_Institution

Semicond. Co., Toshiba Corp., Yokohama

fYear

0

fDate

0-0 0

Firstpage

126

Lastpage

127

Abstract

An excellent 64Mb chain FeRAMtrade using a highly reliable capacitor with damage-robust MOCVD-PZT and SrRuO₃/IrO₂ top electrode (TE) is successfully demonstrated for the first time. A very large signal margin of 540mV at 1.8V is achieved for the capacitor as small as 0.19mum². Large sensing margin is well maintained after 85degC storage, and 10 years lifetime is successfully guaranteed. The combination of damage-robust MOCVD-PZT and optimized SrRuO₃/IrO₂ TE as well as a sophisticated `chain´ structure that has a small bit line capacitance (Cb) nature shows excellent reliability and scalability. This work demonstrates that high density 256Mb chain FeRAM with 0.1 mum² planar capacitor can be realized

Keywords

MOCVD; capacitor storage; ferroelectric storage; iridium compounds; lead compounds; random-access storage; strontium compounds; zirconium compounds; 1.8 V; 10 years; 256 Mbit; 540 mV; 64 Mbit; 85 C; PbZrTiO₃; SrRuO₃-IrO₂; bit line capacitance; chain FeRAM; chain structure; damage-robust MOCVD-PZT capacitor; planar capacitor; sensing margin; top electrode; Capacitors; Electrodes; Ferroelectric films; Hydrogen; Microelectronics; Nonvolatile memory; Plugs; Random access memory; Scalability; Tellurium;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

1-4244-0005-8

Type

conf

DOI

10.1109/VLSIT.2006.1705249

Filename

1705249