Title :
High Density and High Reliability Chain FeRAM with Damage-Robust MOCVD-PZT Capacitor with SrRuO3/IrO2 Top Electrode for 64Mb and Beyond
Author :
Hidaka, O. ; Ozaki, T. ; Kanaya, H. ; Kumura, Y. ; Shimojo, Y. ; Shuto, S. ; Yamada, Y. ; Yahashi, K. ; Yamakawa, K. ; Yamazaki, S. ; Takashima, D. ; Miyakawa, T. ; Shiratake, S. ; Ohtsuki, S. ; Kunishima, I. ; Nitayama, A.
Author_Institution :
Semicond. Co., Toshiba Corp., Yokohama
Abstract :
An excellent 64Mb chain FeRAMtrade using a highly reliable capacitor with damage-robust MOCVD-PZT and SrRuO3/IrO2 top electrode (TE) is successfully demonstrated for the first time. A very large signal margin of 540mV at 1.8V is achieved for the capacitor as small as 0.19mum2. Large sensing margin is well maintained after 85degC storage, and 10 years lifetime is successfully guaranteed. The combination of damage-robust MOCVD-PZT and optimized SrRuO3/IrO2 TE as well as a sophisticated `chain´ structure that has a small bit line capacitance (Cb) nature shows excellent reliability and scalability. This work demonstrates that high density 256Mb chain FeRAM with 0.1 mum2 planar capacitor can be realized
Keywords :
MOCVD; capacitor storage; ferroelectric storage; iridium compounds; lead compounds; random-access storage; strontium compounds; zirconium compounds; 1.8 V; 10 years; 256 Mbit; 540 mV; 64 Mbit; 85 C; PbZrTiO3; SrRuO3-IrO2; bit line capacitance; chain FeRAM; chain structure; damage-robust MOCVD-PZT capacitor; planar capacitor; sensing margin; top electrode; Capacitors; Electrodes; Ferroelectric films; Hydrogen; Microelectronics; Nonvolatile memory; Plugs; Random access memory; Scalability; Tellurium;
Conference_Titel :
VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0005-8
DOI :
10.1109/VLSIT.2006.1705249
