30.9 Normally-off computing with crystalline InGaZnO-based FPGA

Author

Aoki, Toyohiro ; Okamoto, Yuji ; Nakagawa, T. ; Ikeda, Makoto ; Kozuma, Munehiro ; Osada, Takenori ; Kurokawa, Yusuke ; Ikeda, Takashi ; Yamade, Naoto ; Okazaki, Yasuo ; Miyairi, Hidekazu ; Fujita, Masayuki ; Koyama, Jun ; Yamazaki, Shumpei

Author_Institution

Semicond. Energy Lab., Kanagawa, Japan

fYear

2014

fDate

9-13 Feb. 2014

Firstpage

502

Lastpage

503

Abstract

An FPGA employing c-axis aligned crystal In-Ga-Zn oxide (CAAC-IGZO) FET [1] based configuration memories (CMs) is known to need no reconfiguration thanks to nonvolatile CMs, shows high operation speed due to boosting effect of pass gates used in routing switches (RS) [2], and easily realizes fine-grained multi-context (FG-MC) architecture [2] because CMs which need very low power to keep the contents can be constructed with a small number of transistors. It would be very difficult to realize all of these features in FPGAs using MRAM [3] or RRAM [4]. These features are very unique to the CAAC-IGZO FPGA.

Keywords

III-V semiconductors; MRAM devices; field programmable gate arrays; gallium compounds; indium compounds; wide band gap semiconductors; zinc compounds; CAAC-IGZO FET; FPGA; InGaZnO; MRAM; RRAM; c-axis aligned crystal; configuration memory; crystalline InGaZnO; fine-grained multicontext architecture; nonvolatile CM; normally-off computing; pass gate; Clocks; Context; Field programmable gate arrays; Loading; Nonvolatile memory; Registers; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014 IEEE International

Conference_Location

San Francisco, CA

ISSN

0193-6530

Print_ISBN

978-1-4799-0918-6

Type

conf

DOI

10.1109/ISSCC.2014.6757531

Filename

6757531