DocumentCode
2625834
Title
A semi-insulating/n+-structure in GaAs substrates by high energy implantation
Author
Dejun, Han ; Chan, K.T. ; Guohui, Li ; Wenxun, Wang ; Zhu, En-jun
Author_Institution
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, Hong Kong
fYear
1994
fDate
34533
Firstpage
58
Lastpage
61
Abstract
A structure that consists of a semi-insulating layer over a buried n+ layer (SI/n+) has been obtained by MeV Si+ implantation into SI-GaAs substrates and subsequently tailored by a very low dose O+ implantation. This novel structure has been studied by measurements of current-voltage characteristics, electrochemical C-V profiling and Hall effects. The results indicate that this structure is suitable for the provision of isolation, the fabrication of active devices and internal interconnections
Keywords
Hall effect; III-V semiconductors; buried layers; gallium arsenide; integrated circuit interconnections; ion implantation; isolation technology; substrates; GaAs; GaAs substrates; GaAs:Si,O; Hall effect; Si+ implantation; active device fabrication; buried n+ layer; current-voltage characteristics; electrochemical C-V profiling; high energy implantation; internal interconnections; isolation technique; semiinsulating layer; semiinsulating/n+-structure; very low dose O+ implantation; Etching; Gallium arsenide; Integrated circuit interconnections; Integrated circuit technology; Isolation technology; Microwave technology; Nuclear electronics; Ohmic contacts; Optical device fabrication; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1994.Proceedings., 1994 IEEE Hong Kong
Print_ISBN
0-7803-2086-7
Type
conf
DOI
10.1109/HKEDM.1994.395130
Filename
395130
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